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Effect of interface defect density on performance of perovskite solar cell: Correlation of simulation and experiment

Chouhan, Arun Singh and Jasti, Naga Prathibha and Avasthi, Sushobhan (2018) Effect of interface defect density on performance of perovskite solar cell: Correlation of simulation and experiment. In: MATERIALS LETTERS, 221 . pp. 150-153.

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Official URL: http://dx.doi.org/10.1016/j.matlet.2018.03.0957

Abstract

Experimental data from a 17.5% efficient perovskite solar cell has been used to develop a self-consistent device model using Solar Cell Capacitance Simulator (SCAPS). Electronic properties of the individual layers, such as doping density of compact TiO2 (c-TiO2), doping and defect density of perovskite, etc. are extracted from experimental data. The only fitting parameters in the model are the defect densities at spiro-MeOTAD/perovskite interface (IL-1) and perovskite/TiO2 interface (IL-2). The simulated current-voltage (J-V) characteristics and Mott-Schottky plot results match extremely well with the experimentally measured plots, validating the device model. The model was further used to extract insights into the loss mechanism of the high-efficiency perovskite solar cells. Simulations revealed that defect density at IL-1 interface has strong impact on the open-circuit voltage (V-OC), while defect density in the perovskite and IL2 interface has a major impact on short-circuit current density (J(SC)). (C) 2018 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Additional Information: Copy right for this article belong to ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Department/Centre: Division of Biological Sciences > Centre for Neuroscience
Depositing User: Id for Latest eprints
Date Deposited: 04 May 2018 18:50
Last Modified: 04 May 2018 18:50
URI: http://eprints.iisc.ac.in/id/eprint/59679

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