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Realizing P-FETs and Photodiodes on MoS2 through area-selective p-Doping via Vacancy Engineering.

Bhattacharjee, Shubhadeep and Ganapathi, Kolla Lakshmi and Bhat, Navakanta (2017) Realizing P-FETs and Photodiodes on MoS2 through area-selective p-Doping via Vacancy Engineering. In: 75th Annual Device Research Conference (DRC), JUN 25-28, 2017, Univ Notre Dame, South Bend, IN.

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Official URL: http://dx.doi.org/10.1109/DRC.2017.7999418

Abstract

Air-stable and area-selective doping strategies have eluded 2D materials and thus been a major bottleneck in realizing the plethora of semiconductor devices which require an built in electric field accessible from a p/n junction. Here, we demonstrate the possibility of p-doping through Vacancy Engineering, which unlike previous reports of molecular/substitutional doping is both area/dopant controllable and air-stable. Through Ar+ ions of appropriate energy and fluence bombarded on exfoliated MoS2, we demonstrate creation of sulfur vacancies that vary the S:Mo stoichiometry from 1.94 to 0.97 and hence controllably introduce p-type doping as verified using in-situ XPS and ex-situ Raman/PL measurements. FETs fabricated on Ar+ bombarded flakes show complete flip in polarity of carrier type from n-type to p-type when compared to Reference samples with the same metal contacts. Furthermore, selective Ar+ Bombardment only on contacts region shows effective hole injection with I-on/I-off>10(3). Finally p/n junctions with Ar+ bombardment performed on one half of the flake demonstrate high rectification ratio (>10(4)), forward currents (similar to 0.6 mA/cm(2)) and excellent photoresponse (I-light/I-dark similar to 10(3)) and responsivity (100-400 mu A/W).

Item Type: Conference Proceedings
Additional Information: Copy right for this article belong to IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Department/Centre: ?? OS-CNSE ??
Depositing User: Id for Latest eprints
Date Deposited: 17 Apr 2018 15:28
Last Modified: 17 Apr 2018 15:28
URI: http://eprints.iisc.ac.in/id/eprint/59616

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