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Double Pulse Test Based Switching Characterization of SiC MOSFET

Ahmad, SS and Narayanan, G (2017) Double Pulse Test Based Switching Characterization of SiC MOSFET. In: 8th National Power Electronics Conference (NPEC), DEC 18-20, 2017, Coll Engn Pune, Elect Engn Dept, Pune, INDIA, pp. 319-324.

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Official URL: http://dx.doi.org/10.1109/NPEC.2017.8310478

Abstract

Switching characteristics of a 1200 V, 90 A SiC MOSET in an asymmetric II-bridge power converter are measured. Double pulse tests are carried out at different current and voltage levels. The experimental set-up and procedure are explained in detail. The switching waveforms are used to obtain the voltage and current transition times of the MOSFET. The turn-on and turn-off energy losses are also calculated. Since these are influenced by layout of the power circuit, the power converter layout and its effect on the switching waveform are reported. The turn-off energy loss is lower than the data-sheet specified value, while the turn-on energy loss is higher; the total loss is close to the data-sheet value.

Item Type: Conference Proceedings
Additional Information: Copy right for this article belong to IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Department/Centre: Division of Electrical Sciences > Electrical Engineering
Depositing User: Id for Latest eprints
Date Deposited: 17 Apr 2018 15:28
Last Modified: 21 Feb 2019 11:06
URI: http://eprints.iisc.ac.in/id/eprint/59614

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