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Temperature-dependent electrical characteristics and carrier transport mechanism of p-Cu2ZnSnS4/n-GaN heterojunctions

Reddy, Varra Niteesh and Reddy, M. Siva Pratap and Gunasekhar, K R and Lee, Jung-Hee (2018) Temperature-dependent electrical characteristics and carrier transport mechanism of p-Cu2ZnSnS4/n-GaN heterojunctions. In: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 124 (4).

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Official URL: http://dx.doi.org/10.1007/s00339-018-1708-0

Abstract

This work explores the temperature-dependent electrical characteristics and carrier transport mechanism of Au/p-Cu2ZnSnS4/n-type GaN heterojunction (HJ) diodes with a CZTS interlayer. The electrical characteristics were examined by current-voltage-temperature, turn-on voltage-temperature and series resistance-temperature in the high-temperature range of 300-420 K. It is observed that an exponential decrease in the series resistance (R-S) and increase in the ideality factor (n) and barrier height (phi(b)) with increase in temperature. The thermal coefficient (K-j) is determined to be -1.3 mV K-1 at >= 300 K. The effective phi(b) is determined to be 1.21 eV. This obtained barrier height is consistent with the theoretical one. The characteristic temperature (T-0) resulting from the Cheung's functions dV/d(lnI) vs. I and H(I) vs. I], is seen that there is good agreement between the T-0 values from both Cheung's functions. The relevant carrier transport mechanisms of Au/p-CZTS/n-type GaN HJ are explained based on the thermally decreased energy band gap of n-type GaN layers, thermally activated deep donors and increased further activated shallow donors.

Item Type: Journal Article
Additional Information: Copy right for the article belong to SPRINGER, 233 SPRING ST, NEW YORK, NY 10013 USA
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Depositing User: Id for Latest eprints
Date Deposited: 11 Apr 2018 19:58
Last Modified: 11 Apr 2018 19:58
URI: http://eprints.iisc.ac.in/id/eprint/59507

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