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Dependence of Avalanche Breakdown on Surface & Buffer Traps in AlGaN/GaN HEMTs

Joshi, Vipin and Shankar, Bhawani and Tiwari, Shree Prakash and Shrivastava, Mayank (2017) Dependence of Avalanche Breakdown on Surface & Buffer Traps in AlGaN/GaN HEMTs. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), SEP 07-09, 2017, Kamakura, JAPAN, pp. 109-112.

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Official URL: http://dx.doi.org/10.23919/SISPAD.2017.8085276


For the very first time, influence of traps on avalanche breakdown of AlGaN/GaN HEMTs is discussed. Impact of surface and bulk traps on breakdown voltage and device scaling is discussed with associated physics. Surface trap's were found to cause distinct breakdown characteristics with breakdown point varying from gate edge to drain edge, depending on nature, type and concentration. Buffer traps too influence the electric field near gate edge and leakage through the device, thereby affecting breakdown voltage accordingly.

Item Type: Conference Proceedings
Additional Information: Copy right for the article belong to IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Depositing User: Id for Latest eprints
Date Deposited: 04 Apr 2018 18:50
Last Modified: 04 Apr 2018 18:50
URI: http://eprints.iisc.ac.in/id/eprint/59492

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