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On the ESD Behavior of Pentacene Channel Organic Thin Film Transistors

Sinha, Rajat and Kranthi, N K and Sambandan, Sanjiv and Shrivastava, Mayank (2017) On the ESD Behavior of Pentacene Channel Organic Thin Film Transistors. In: 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), SEP 10-14, 2017, Tucson, AZ.

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Official URL: http://dx.doi.org/10.23919/EOSESD.2017.8073426

Abstract

Detailed physical insight into the ESD behavior and unique failure mechanisms of Pentacene Organic Thin Film Transistors (OTFTs) is reported. Orders of magnitude difference in channel current under ESD time scales, when compared to DC time scales, is discovered. Moreover, unique three stage TLP characteristics with snapback state and novel failure mechanism are reported. Finally, influence of channel field and Surface Assembled Monolayer (SAM) on the carrier transport and failure threshold is addressed.

Item Type: Conference Proceedings
Additional Information: Copy right for the article belong toIEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Depositing User: Id for Latest eprints
Date Deposited: 04 Apr 2018 18:51
Last Modified: 04 Apr 2018 18:51
URI: http://eprints.iisc.ac.in/id/eprint/59477

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