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On the ESD Behavior of AlGaN/GaN Schottky Diodes and Trap Assisted Failure Mechanism

Shankar, Bhawani and Sengupta, Rudrarup and Gupta, Sayak Dutta and Soni, Ankit and Mohan, Nagaboopathy and Bhat, Navakanta and Raghavan, Srinivasan and Shrivastava, Mayank (2017) On the ESD Behavior of AlGaN/GaN Schottky Diodes and Trap Assisted Failure Mechanism. In: 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), SEP 10-14, 2017, Tucson, AZ.

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Official URL: http://dx.doi.org/10.23919/EOSESD.2017.8073423


This experimental study reports ESD behavior of novel designs of GaN Schottky diodes. Impact of electro-thermal transport, device degradation and trap generation on its ESD robustness is analyzed. Role of interface traps in ESD failure of GaN Schottky diode is investigated. Transition from soft-to-hard failure, which is found to depend on diode area, presence of traps and diode design is discussed. Unique degradation trends, cumulative nature of degradation and trap assisted failure modes are discovered.

Item Type: Conference Proceedings
Additional Information: Copy right for the article belong toIEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Department/Centre: Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Depositing User: Id for Latest eprints
Date Deposited: 04 Apr 2018 18:51
Last Modified: 04 Apr 2018 18:51
URI: http://eprints.iisc.ac.in/id/eprint/59476

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