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Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio

Murali, Krishna and Dandu, Medha and Das, Sarthak and Majumdar, Kausik (2018) Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio. In: ACS APPLIED MATERIALS & INTERFACES, 10 (6). pp. 5657-5664.

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Official URL: http://dx.doi.org/10.1021/acsami.7b18242


Backward diodes conduct more efficiently in the reverse bias than in the forward bias, providing superior high-frequency response, temperature stability, radiation hardness, and 1/f noise performance than a conventional diode conducting in the forward direction. Here, we demonstrate a van der Waals material-based backward diode by exploiting the giant staggered band offsets of WSe2/SnSe2 vertical heterojunction. The diode exhibits an ultrahigh-reverse rectification ratio (R) of similar to 2.1 x 10(4), and the Same is Maintained up to an unusually large-bias of 1.5 V-outperforming existing backward diode reports using Conventional bulk semiconductors as well as one- and two-dimensional materials by More than an order of magnitude while maintaining an impressive curvature coefficient (gamma) of similar to 37 V-1. The-transport mechanism in the diode is shown to be efficiently tunable by external gate and drain bias, as well as by the thickness of the WSe2 layer and the type of metal contacts used. These results pave the way for practical electronic circuit applications using two-dimensional materials and their heterojunctions.

Item Type: Journal Article
Additional Information: Copy right for the article belong to AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Depositing User: Id for Latest eprints
Date Deposited: 14 Mar 2018 17:39
Last Modified: 14 Mar 2018 17:39
URI: http://eprints.iisc.ac.in/id/eprint/59170

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