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Experimental study on the influence of junction temperature on the relationship between IGBT switching energy loss and device current

Das, Subhas Chandra and Narayanan, G and Tiwari, Arvind (2018) Experimental study on the influence of junction temperature on the relationship between IGBT switching energy loss and device current. In: MICROELECTRONICS RELIABILITY, 80 . pp. 134-143.

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Official URL: http://dx.doi.org/10.1016/j.microrel.2017.11.023

Abstract

Accurate determination of power losses in semiconductor devices is important for optimal design and reliable operation of a power converter. The switching loss is an important component of the total device loss in an insulated-gate bipolar transistor (IGBT) in a voltage source inverter. The objective here is to study experimentally the influence of junction temperature on the turn-on switching energy loss E-on and turn-off switching energy loss E-off. More specifically E-on and E-off are both related to device current I-c; the influence of junction temperature on the relationship between E-on and I-c and that between E-off and I-c is studied. As the operating environmental conditions and load conditions of power converter vary widely, a wide range of junction temperatures between -35 degrees C and + 125 degrees C is considered here. The experimental data enable precise determination of the switching loss in each device in a high-power converter at any practical operating condition. This leads to precise estimation of total device loss and optimal thermal design of the converter. This further helps off-line and/or on-line estimation of device junction temperatures required for study of thermal cycles and reliability.

Item Type: Journal Article
Additional Information: Copy right for this article belong to the PERGAMON-ELSEVIER SCIENCE LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND
Department/Centre: Division of Electrical Sciences > Electrical Engineering
Depositing User: Id for Latest eprints
Date Deposited: 02 Mar 2018 14:55
Last Modified: 02 Mar 2018 14:55
URI: http://eprints.iisc.ac.in/id/eprint/59059

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