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Aspects of Epitaxial Design and Estimation of 2DEG Mobility in InAlN/AlN/InGaN/GaN High Electron Mobility Transistors

Singh, Vikash K and Nath, Digbijoy N (2018) Aspects of Epitaxial Design and Estimation of 2DEG Mobility in InAlN/AlN/InGaN/GaN High Electron Mobility Transistors. In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 215 (2).

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Official URL: http://dx.doi.org/10.1002/pssa.201700757

Abstract

In this paper, a epitaxial design of InAlN/AlN/InGaN/GaN high electron mobility transistors (HEMTs), considering the vital aspects related to its device exploration is proposed. Mobility of two dimensional electron gas in the proposed, practically viable structures of InxGa1-xN-channel (0.1 < x < 0.4) HEMT is estimated. It is shown that 2DEG mobility is predominantly limited by alloy scattering rather than phonon scattering, unlike in conventional GaN-channel HEMTs. Finally, room temperature mobility of 2DEG in InGaN-channel HEMT is simulated on the basis of alloy scattering and phonon scattering only. Results are in close proximity with reported experimental results. We observe that, for n(s) approximate to 2 x 10(13) cm(-2), mobility drops rapidly from approximate to 900 to approximate to 550 cm(2) V-1 . s(-1) as `x' is increased from 0.1 to 0.2 and thereafter it decreases at a relatively lesser rate. Severe degradation in mobility is predicted for x > 0.3.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the WILEY-V C H VERLAG GMBH, POSTFACH 101161, 69451 WEINHEIM, GERMANY
Department/Centre: Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Depositing User: Id for Latest eprints
Date Deposited: 02 Mar 2018 15:06
Last Modified: 02 Mar 2018 15:06
URI: http://eprints.iisc.ac.in/id/eprint/58907

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