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Investigations of Sol-Gel ZnO Films Nanostructured by Reactive Ion Beam Etching for Broadband Anti-Reflection

Visser, D and Ye, Z and Prajapati, CS and Bhat, N and Anand, S (2017) Investigations of Sol-Gel ZnO Films Nanostructured by Reactive Ion Beam Etching for Broadband Anti-Reflection. In: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 6 (9). P653-P659.

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Official URL: http://dx.doi.org/10.1149/2.0331709jss

Abstract

A novel ZnO dry etching approach is introduced using reactive ion beam etching of thick sol-gel ZnO layers for controlled nanodisk/nanocone array fabrication. In this approach the same system can be used for the colloidal lithography mask (silica particles) size reduction by a fluorine-based chemistry and etching of the ZnO nanostructures by a CH4/H-2/Ar chemistry. This resulted in a ZnO: SiO2 etch selectivity of similar to 3.4 and etch rate of similar to 56 nm/min. Thick sol-gel ZnO layers, nanodisk arrays and (truncated) nanocone arrays were fabricated and their optical properties analyzed by finite-difference time-domain simulations and spectrally-resolved total/specular reflectivity measurements. The demonstrated broadband omnidirectional anti-reflection, controlled nanostructure period/geometry and low absorption in the visible-NIR spectrum makes these sol-gel ZnO nanostructures very interesting for many optoelectronic applications, including photovoltaics. (c) The Author(s) 2017. Published by ECS. All rights reserved.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the ELECTROCHEMICAL SOC INC, 65 SOUTH MAIN STREET, PENNINGTON, NJ 08534 USA
Department/Centre: Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Depositing User: review EPrints Reviewer
Date Deposited: 12 Jan 2018 06:51
Last Modified: 12 Jan 2018 06:51
URI: http://eprints.iisc.ac.in/id/eprint/58788

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