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Deep UV-Vis photodetector based on ferroelectric/semiconductor heterojunction

Pandey, BK and Dias, S and Nanda, KK and Krupanidhi, SB (2017) Deep UV-Vis photodetector based on ferroelectric/semiconductor heterojunction. In: JOURNAL OF APPLIED PHYSICS, 122 (23).

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Official URL: http://dx.doi.org/10.1063/1.4994780


Herein, we develop a ferroelectric/semiconducting heterostnictiire for deep UV-Vis photo detection as a new approach to enhance the photocurrent by introducing the polarization-dependent interfacial coupling effect. The deep UV-Vis photo detection efficiency of the heterostnictiire device is improved as compared with BaTiO(3)and ZnO devices. The polarization-dependent interfacial coupling effect has been demonstrated by resistive switching and piezoresponse force microscopy study. The present work provides an efficient and novel way in designing highly efficient ferroelectric-based photodetector and new optoelectronic memory devices. Published by AIP Publishing.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Depositing User: review EPrints Reviewer
Date Deposited: 12 Jan 2018 09:13
Last Modified: 12 Jan 2018 09:13
URI: http://eprints.iisc.ac.in/id/eprint/58680

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