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ESD Behavior of Large Area CVD Graphene RF Transistors: Physical Insights and Technology Implications

Kranthi, NK and Mishra, Abhishek and Meersha, Adil and Shrivastava, Mayank (2017) ESD Behavior of Large Area CVD Graphene RF Transistors: Physical Insights and Technology Implications. In: IEEE International Reliability Physics Symposium (IRPS), APR 02-06, 2017, Monterey, CA.

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Official URL: http://dx.doi.org/10.1109/IRPS.2017.7936298

Abstract

In this work, for the first time, we have used a matured graphene technology platform for ESD physics explorations while investigating implications of various design and technology options. Impact of diffusive vs. ballistic carrier transport and top-gate vs. back-gate on failure mechanism is investigated. A unique contact limited failure in graphene transistors is reported. Physical insights on current saturation in graphene FET and unique step by step failure in dielectric capped transistors is presented for the first time. Moreover, device degradation under ESD time scales and its implications on current saturation are revealed. Finally, influence of various top-gate designs on the ESD performance is reported. The new physical insight and matured graphene FET technology has enabled record high failure current.

Item Type: Conference Proceedings
Additional Information: Copy right for this article belongs to the IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Depositing User: Id for Latest eprints
Date Deposited: 23 Dec 2017 08:32
Last Modified: 23 Dec 2017 08:32
URI: http://eprints.iisc.ac.in/id/eprint/58491

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