Graphene Electrodes as Barrier-Free Contacts for Carbon Nanotube Field-Effect Transistors

Gangavarapu, Yasasvi PR and Lokesh, Punith C and Bhat, KN and Naik, AK (2017) Graphene Electrodes as Barrier-Free Contacts for Carbon Nanotube Field-Effect Transistors. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (10). pp. 4335-4339.

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Abstract

This work evaluates the performance of carbon nanotube field-effect transistors (CNTFETs) using few layergraphene as the contact electrodematerial. We present the experimental results of the barrier height at carbon nanotube-graphene junction using temperature dependent I-V measurements. The estimated barrier height in our devices for both holes and electrons is close to zero indicating theohmic contact of graphenefor both p-type and n-type CNTFETs thus demonstrating the suitability of graphene as electrode material for CMOS-type circuits based on CNTFETs. Furthermore, we observe that there is no correlation between the barrier height and thickness of graphene.

Item Type:	Journal Article
Publication:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Additional Information:	Copy right for this article belongs to the IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	01 Dec 2017 06:51
Last Modified:	25 Feb 2019 11:20
URI:	http://eprints.iisc.ac.in/id/eprint/58360

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