Enhanced UV Photodetector Response of ZnO/Si With AlN Buffer Layer

Roul, Basanta and Pant, Rohit and Chirakkara, Saraswathi and Chandan, Greeshma and Nanda, K K and Krupanidhi, S B (2017) Enhanced UV Photodetector Response of ZnO/Si With AlN Buffer Layer. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (10). pp. 4161-4166.

PDF IEEE_TRA_ELE_64-10_4161_2017.pdf - Published Version Restricted to Registered users only Download (1MB) | Request a copy

Abstract

Studies have been carried out on the enhancement of responsivity and detectivity of the ZnO thin-films-based ultraviolet photodetectors by introducing an AlN buffer layer on silicon substrate. The ZnO film grown with AlN buffer layer established an epitaxial relation with the substrate and was found to show improved crystallinity with excellent optical properties. A strong and narrow photoluminescence emission was observed on the ZnO film grown with buffer layer, while a defect related broad emission was dominated on the film without buffer layer. The photodetectors showed a higher responsivity (R-lambda) of 1.03x10(4) A/W with a specific detectivity (D*) of 5.21 x 10(12) cm.Hz(1/2).W-1 at an applied bias of 3 V due to their excellent crystal quality.

Item Type:	Journal Article
Publication:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Additional Information:	Copy right for this article belongs to the IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	01 Dec 2017 06:55
Last Modified:	01 Dec 2017 06:55
URI:	http://eprints.iisc.ac.in/id/eprint/58358

Actions (login required)

View Item