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Band Gap Engineering of Hexagonal SnSe2 Nanostructured Thin Films for Infra-Red Photodetection

Mukhokosi, Emma P and Krupanidhi, Saluru B and Nanda, Karuna K (2017) Band Gap Engineering of Hexagonal SnSe2 Nanostructured Thin Films for Infra-Red Photodetection. In: SCIENTIFIC REPORTS, 7 .

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Official URL: http://doi.org/10.1038/s41598-017-15519-x


We, for the first time, provide the experimental demonstration on the band gap engineering of layered hexagonal SnSe2 nanostructured thin films by varying the thickness. For 50 nm thick film, the band gap is similar to 2.04 eV similar to that of monolayer, whereas the band gap is approximately similar to 1.2 eV similar to that of bulk for the 1200 nm thick film. The variation of the band gap is consistent with the the theoretically predicted layer-dependent band gap of SnSe2. Interestingly, the 400-1200 nm thick films were sensitiveto 1064 nm laser iradiation and the sensitivity increases almost exponentiallly with thickness, while films with 50-140 nm thick are insensitive which is due to the fact that the band gap of thinner films is greater than the energy corresponding to 1064 nm. Over all, our results establish the possibility of engineering the band gap of SnSe2 layered structures by simply controlling the thickness of the film to absorb a wide range of electromagnetic radiation from infra-red to visible range.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the NATURE PUBLISHING GROUP, MACMILLAN BUILDING, 4 CRINAN ST, LONDON N1 9XW, ENGLAND
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Depositing User: Id for Latest eprints
Date Deposited: 01 Dec 2017 06:46
Last Modified: 01 Dec 2017 06:46
URI: http://eprints.iisc.ac.in/id/eprint/58347

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