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Impedance studies on PF6- doped Poly(3,4 ethylenedioxythiophene) Devices

Roy, Amit and Anjaneyulu, P and Menon, R (2017) Impedance studies on PF6- doped Poly(3,4 ethylenedioxythiophene) Devices. In: 61st DAE-Solid State Physics Symposium, DEC 26-30, 2016, KIIT Univ, Bhubaneswar, INDIA.

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Official URL: http://doi.org/10.1063/1.4980696

Abstract

Carrier density, substrate and synthesis temperature dependent impedance measurements have been performed on Poly(3,4-ethylenedioxythiophene) PEDOT] based devices in metal/polymer/metal geometry at room temperature. The relaxation mechanism of carries in these devices can be varied as per the growth condition. It is observed that in stainless steel (SS)/PEDOT/Silver (Ag) devices, as the carrier density decreases the interface related mechanism takes control over bulk transport, but as the synthesis temperature is lowered the bulk transport dominates over interface related mechanism. The substrate dependent studies have shown that the electrode potential can alter the growth of polymer chains, which affects the relaxation mechanism of the carriers.

Item Type: Conference Proceedings
Additional Information: Copy right for this article belongs to the AMER INST PHYSICS, 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 11 Nov 2017 04:35
Last Modified: 11 Nov 2017 04:35
URI: http://eprints.iisc.ac.in/id/eprint/58237

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