Mondal, Sandip and Kumar, Arvind and Rao, Koteswara K S R and Venkataraman, V (2017) Scaling Behavior of Fully Spin-coated TFT. In: 61st DAE-Solid State Physics Symposium, DEC 26-30, 2016, KIIT Univ, Bhubaneswar, INDIA.
Full text not available from this repository. (Request a copy)Abstract
We studied channel scaling behavior of fully spin coated, low temperature solution processed thin film transistor (TFT) fabricated on p(++) - Si (similar to 10(21) cm(-3)) as bottom gate. The solution processed, spin coated 40 um thick amorphous Indium Gallium Zinc Oxide (a-IGZO) and 50 nni thick amorphous zirconium di-oxide (a-ZnO2) has been used as channel and low leakage dielectric at 350 degrees C respectively. The channel scaling effect of the TFT with different width/length ratio (W/L= 2.5, 5 and 15) for same channel length (L = 10 mu m) has been demonstrated. The lowest threshold voltage (V-th) is 6.25 V tbr the W/L=50/10. The maximum field effect mobility (mu(FE)) has been found to be 0.123 cm(2)/Vs from WiL of 50/10 with the drain to source voltage (V-D) of 10V and 20V gate to source voltage (V-G). We also demonstrated that there is no contact resistance effect on the mobility of the fully sol-gel spin coated TFT
| Item Type: | Conference Proceedings |
|---|---|
| Series.: | AIP Conference Proceedings |
| Additional Information: | Copy right for this article belongs to the AMER INST PHYSICS, 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 11 Nov 2017 05:07 |
| Last Modified: | 11 Nov 2017 05:07 |
| URI: | http://eprints.iisc.ac.in/id/eprint/58233 |
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