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Growth and Characterization Studies of ZnS Thin Films Prepared by Single Source Evaporation Technique

Maligi, Anantha Sunil and Jampana, Nagaraju and Gowravaram, Mohan Rao (2017) Growth and Characterization Studies of ZnS Thin Films Prepared by Single Source Evaporation Technique. In: 61st DAE-Solid State Physics Symposium, DEC 26-30, 2016, KIIT Univ, Bhubaneswar, INDIA.

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Official URL: http://doi.org/10.1063/1.4980540

Abstract

Zinc sulfide thin films are deposited on glass substrates using thermal evaporation technique. Effect of thickness on the properties of as-deposited ZnS films is studied. ZnS films exhibited cubic structure with preferential orientation along (111) plane. All the films exhibited n-type conductivity with resistivity ranging in the order of 10(5) to 10(6) Omega-cm. The transmittance in the visible region is in the range of 80 to 89% and the band gap of the material varied from 3.65 to 3.52 eV. The as-deposited films can be used as window layer for fabrication of hetero-junction solar cell.

Item Type: Conference Proceedings
Additional Information: Copy right for this article belongs to the AMER INST PHYSICS, 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Depositing User: Id for Latest eprints
Date Deposited: 11 Nov 2017 04:20
Last Modified: 11 Nov 2017 04:20
URI: http://eprints.iisc.ac.in/id/eprint/58232

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