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Band Alignment and Electrical Investigations of Ultra-Thin Al2O3 on Si by E-beam Evaporation

Kumar, Arvind and Mondal, Sandip and Rao, Koteswara K S R (2017) Band Alignment and Electrical Investigations of Ultra-Thin Al2O3 on Si by E-beam Evaporation. In: 61st DAE-Solid State Physics Symposium, DEC 26-30, 2016, KIIT Univ, Bhubaneswar, INDIA.

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Official URL: http://doi.org/10.1063/1.4980528


The continuous downscaling leads the search of high-gate dielectrics. The films amorphous in nature offered good mechanical flexibility, smooth surfaces and better uniformity associated with low leakage current density. In this work, 16 nm thick amorphous Al2O3 films on silicon substrate are fabricated by E-beam evaporation. The high value of refractive index (1.76) extracted from ellipsometry analysis directs the deposition of compact film. The AFM analysis reveal a flat surface with small RMS surface roughness 1.5 angstrom. The band gap is extracted from O-1s electron loss spectra and was found 6.7 eV and band alignment of Al2O3/Si is derived from the UPS measurements. The films are incorporated in Metal Insulator -Semiconductor (MIS) capacitor to perform the electrical measurement. The flat band voltage (V-FB), dielectric constant () and oxide trapped charges (Q(ot)) extracted from high frequency (1 MHz) C-V curve are - 0.4 V, 8.4 and 2 x 10(11) cm(-2), respectively. The small flat band voltage - 0.4 V, narrow hysteresis and very little frequency dispersion suggest an exceptional good Al2O3/Si interface with small quantity of trapped charges in the oxide. The leakage current density was 4.27 x 10(-8) A/cm(2) at 1 V. The moderate dielectric constant and low leakage current density with ultra-smooth surface is quite useful towards its application in future CMOS and memory devices.

Item Type: Conference Proceedings
Additional Information: Copy right for this article belongs to the AMER INST PHYSICS, 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 11 Nov 2017 04:23
Last Modified: 11 Nov 2017 04:23
URI: http://eprints.iisc.ac.in/id/eprint/58230

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