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Impact of Time-dependent Annealing on TiO2 Films for CMOS application

Gyanan, Gyanan and Mondal, Sandip and Kumar, Arvind (2017) Impact of Time-dependent Annealing on TiO2 Films for CMOS application. In: 61st DAE-Solid State Physics Symposium, DEC 26-30, 2016, KIIT Univ, Bhubaneswar, INDIA.

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Official URL: http://doi.org/10.1063/1.4980535

Abstract

Post-deposition annealing (PDA) is the inherent part of sol-gel fabrication process to achieve the optimum device performance, especially in CMOS applications. The annealing removes the oxygen vacancies and improves the structural order of dielectric films. The process also reduces the interface related defects and improves the interfacial properties. In this work, we have integrated the sol-gel spin-coating deposited high-TiO2 films in MOS. The films are fired at 400 degrees C for the duration of 20, 40, 60 and 80 min. The thicknesses of the films were found to be of similar to 30 nm using ellipsometry. The (Al/TiO2/p-Si) devices were examined with current-voltage (I-V) and capacitance-voltage (C-V) at room temperature to understand the influence of firing time. The C-V and I-V characteristic showed a significant dependence on annealing time such as variation in dielectric constant and leakage current. The accumulation capacitance (Cox), dielectric constant (kappa) and the equivalent oxide thickness (EOT) of the film fired for 60 min were found to be 458 pF, 33, and 4.25nm, respectively with a low leakage current density (1.09 10(-6) A/cm(2)) fired for 80 min at + 1 V.

Item Type: Conference Proceedings
Additional Information: Copy right for this article belongs to the AMER INST PHYSICS, 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 11 Nov 2017 04:49
Last Modified: 11 Nov 2017 04:49
URI: http://eprints.iisc.ac.in/id/eprint/58228

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