BaBiO3: A potential absorber for all-oxide photovoltaics

Chouhan, Arun Singh and Athresh, Eashwer and Ranjan, Rajeev and Raghavan, Srinivasan and Avasthi, Sushobhan (2017) BaBiO3: A potential absorber for all-oxide photovoltaics. In: MATERIALS LETTERS, 210 . pp. 218-222.

PDF MAT_LET_210_218_2017.pdf - Published Version Restricted to Registered users only Download (1MB) | Request a copy

Abstract

BaBiO3 is presented as a potential absorber for all-oxide solar cells. Thin-films of BaBiO3 were deposited by pulsed laser deposition. As-deposited thin-films were amorphous, but a rapid thermal anneal at 600 degrees C for 10 min yields polycrystalline thin-films. X-ray photoelectron spectroscopy measurements show that deposited films have Barium in Ba-12 state and bismuth in both Bi-13 and Bi-15 state. UV-Vis spectrophotometer (UV-Vis) shows that BaBiO3 films have direct and indirect bandgap (E-g) of 2.25 eV and 2.02 eV respectively, while ultraviolet photoelectron spectroscopy (UPS) shows that valence band maxima (E-V), conduction band minima (E-C) and work-function (phi) of BaBiO3 is at 5.82 eV, 3.8 eV and 4.22 eV respectively. BaBiO3 thin-film devices with a FTO/c-TiO2/BaBiO3/Au structure show rectifying current-voltage characteristics in dark. Under illumination, a photo response with a J(light)/J(dark) ratio of 1.75 is observed. (C) 2017 Elsevier B.V. All rights reserved.

Item Type:	Journal Article
Publication:	MATERIALS LETTERS
Additional Information:	Copy right for this article belongs to the ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	11 Nov 2017 07:27
Last Modified:	11 Nov 2017 07:27
URI:	http://eprints.iisc.ac.in/id/eprint/58178

Actions (login required)

View Item