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Defining the Role of Silicon Substrate Orientation on the Polycrystalline Diamond Film: A Novel Approach for Characterizing Faceted Microstructures

Jain, L and Krishna, K V Mani and Prasad, Aditya and Mehtani, H K and Misra, D S and Misra, Abha and Samajdar, I (2017) Defining the Role of Silicon Substrate Orientation on the Polycrystalline Diamond Film: A Novel Approach for Characterizing Faceted Microstructures. In: CRYSTAL GROWTH & DESIGN, 17 (10). pp. 5366-5376.

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Official URL: http://doi.org/10.1021/acs.cgd.7b00853

Abstract

Polycrystalline diamond films (similar to 10 mu m thick) were grown on five different silicon (Si) substrate orientations by microwave plasma chemical vapor deposition. The selected Si substrates had a range of f(theta): 0.18-0.65. It is to be noted that f(theta) scales inversely with the packing density of the interface. As f(theta) decreased, three changes in the polycrystalline diamond microstructures were observed. (i) At the film surface <110>-fiber texture increased but <100>-fiber dropped. (ii) A novel reconstruction technique was proposed and tested for faceted microstructures. The reconstructed microstructures revealed that the observed texture changes, with a decrease in f(theta), was accompanied by elimination of very fine facets. (iii) Noticeable differences in Raman estimated stress gradients were also observed: the lowest stress gradients for more closed packed substrates.

Item Type: Journal Article
Publication: CRYSTAL GROWTH & DESIGN
Additional Information: Copy right for this article belongs to the AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 03 Nov 2017 10:45
Last Modified: 03 Nov 2017 10:45
URI: http://eprints.iisc.ac.in/id/eprint/58167

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