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Fluorinated h-BN as a magnetic semiconductor

Radhakrishnan, Sruthi and Das, Deya and Samanta, Atanu and de los Reyes, Carlos A and Deng, Liangzi and Alemany, Lawrence B and Weldeghiorghis, Thomas K and Khabashesku, Valery N and Kochat, Vidya and Jin, Zehua and Sudeep, Parambath M and Marti, Angel A and Chu, Ching-Wu and Roy, Ajit and Tiwary, Chandra Sekhar and Singh, Abhishek K and Ajayan, Pulickel M (2017) Fluorinated h-BN as a magnetic semiconductor. In: SCIENCE ADVANCES, 3 (7).

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Official URL: http://doi.org/10.1126/sciadv.1700842

Abstract

We report the fluorination of electrically insulating hexagonal boron nitride (h-BN) and the subsequent modification of its electronic band structure to a wide bandgap semiconductor via introduction of defect levels. The electrophilic nature of fluorine causes changes in the charge distribution around neighboring nitrogen atoms in h-BN, leading to room temperature weak ferromagnetism. The observations are further supported by theoretical calculations considering various possible configurations of fluorinated h-BN structure and their energy states. This unconventional magnetic semiconductor material could spur studies of stable two-dimensional magnetic semiconductors. Although the high thermal and chemical stability of h-BN have found a variety of uses, this chemical functionalization approach expands its functionality to electronic and magnetic devices.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the AMER ASSOC ADVANCEMENT SCIENCE, 1200 NEW YORK AVE, NW, WASHINGTON, DC 20005 USA
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Depositing User: Id for Latest eprints
Date Deposited: 21 Oct 2017 06:17
Last Modified: 21 Oct 2017 06:17
URI: http://eprints.iisc.ac.in/id/eprint/58073

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