ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Effect of Nitrogen Content on Physical and Chemical Properties of TiN Thin Films Prepared by DC Magnetron Sputtering with Supported Discharge

Kavitha, A and Kannan, R and Gunasekhar, K R and Rajashabala, S (2017) Effect of Nitrogen Content on Physical and Chemical Properties of TiN Thin Films Prepared by DC Magnetron Sputtering with Supported Discharge. In: JOURNAL OF ELECTRONIC MATERIALS, 46 (10). pp. 5773-5780.

[img] PDF
Jou_Ele_Mat_46-10_5773_2017.pdf - Published Version
Restricted to Registered users only

Download (1MB) | Request a copy
Official URL: http://doi.org/10.1007/s11664-017-5608-4

Abstract

Amorphous titanium nitride (TiN) thin films have been prepared on silicon (Si) and glass substrates by direct-current (DC) reactive magnetron sputtering with a supported discharge (triode). Nitrogen gas (N-2) at partial pressure of 0.3 Pa, 0.4 Pa, 0.5 Pa, and 0.6 Pa was used to prepare the TiN thin films, maintaining total pressure of argon and N-2 of about 0.7 Pa. The chemical, microstructural, optical, and electrical properties of the TiN thin films were systematically studied. Presence of different phases of Ti with nitrogen (N), oxygen (O-2), and carbon (C) elements was revealed by x-ray photoelectron spectroscopy characterization. Increase in the nitrogen pressure from 0.3 Pa to 0.6 Pa reduced the optical bandgap of the TiN thin film from 2.9 eV to 2.7 eV. Photoluminescence study showed that TiN thin film deposited at N-2 partial pressure of 0.3 Pa exhibited three shoulder peaks at 330 nm, 335 nm, and 340 nm, which disappeared when the sample was deposited with N-2 partial pressure of 0.6 Pa. Increase in the nitrogen content decreased the electrical resistivity of the TiN thin film from 3200 mu a''broken vertical bar cm to 1800 mu a''broken vertical bar cm. Atomic force microscopy studies of the TiN thin films deposited with N-2 partial pressure of 0.6 Pa showed a uniform surface pattern associated with accumulation of fine grains. The results and advantages of this method of preparing TiN thin films are also reported.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the SPRINGER, 233 SPRING ST, NEW YORK, NY 10013 USA
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Depositing User: Id for Latest eprints
Date Deposited: 23 Sep 2017 05:12
Last Modified: 23 Sep 2017 05:12
URI: http://eprints.iisc.ac.in/id/eprint/57850

Actions (login required)

View Item View Item