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Thermodynamic Modeling of W-C-O-H-S System for Controlled Growth of WS2 Atomic Layers by True CVD

Dhar, Sukanya and Lalithambika, Anjali and Kumar, Kranthi and Raghavan, Srinivasan (2017) Thermodynamic Modeling of W-C-O-H-S System for Controlled Growth of WS2 Atomic Layers by True CVD. In: Symposium on Emerging Materials for Post CMOS Devices/Sensing and Applications 8 held during the 231st Meeting of The Electrochemical-Society, MAY 28-JUN 01, 2017, New Orleans, LA, pp. 49-59.

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Official URL: http://doi.org/10.1149/07702.0049ecst

Abstract

A detailed thermodynamic analysis of the solid and gas phases for the W-C-O-H-S system, used for large area chemical vapor deposition (CVD) of WS2, is presented and compared with experimental results. Given the multivariable nature of the problem, good agreement is observed. CVD phase diagrams which predict parameter windows in which pure WS2 can be synthesized have been provided for important gas phase chemistries. Pure H-2 as a carrier gas is shown to facilitate the largest contamination free process window. The ability to predict completely different outcomes on using Ar versus (Ar+H-2) mixture or pure H-2 as the carrier gas highlights the importance of such thermodynamic modelling. Comparison of these results with a similar system Mo-C-O-H-S has been performed, which indicates some differences in stability windows, but follows similar trends.

Item Type: Conference Proceedings
Additional Information: Copy right for this article belongs to the ELECTROCHEMICAL SOC INC, 65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA
Department/Centre: Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Depositing User: Id for Latest eprints
Date Deposited: 08 Sep 2017 09:21
Last Modified: 08 Sep 2017 09:21
URI: http://eprints.iisc.ac.in/id/eprint/57775

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