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Polarization-induced interfacial coupling modulations in BaTiO3/GaN heterojunction devices

Bhat, Thirumaleshwara N and Pandey, B K and Krupanidhi, S B (2017) Polarization-induced interfacial coupling modulations in BaTiO3/GaN heterojunction devices. In: JOURNAL OF PHYSICS D-APPLIED PHYSICS, 50 (27).

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We report on the ferroelectric polarization-induced switchable interfacial coupling modulations in BaTiO3/GaN heterojunction transport behaviour. The ferroelectric barium titanate, BaTiO3 (BTO) was integrated with polar semiconductor gallium nitride (GaN). BTO with a tetragonal structure was deposited on a wurtzite (0 0 0 1) epitaxial GaN/c-Al2O3 substrate by pulsed laser deposition, which was further confirmed by x-ray diffraction and Raman spectroscopy. BTO/GaN heterojunctions with resistive switching behaviour exhibited modulations in transport characteristics due to the interfacial coupling. The ferroelectric nature and interfacial coupling effect of this heterojunction was confirmed with the help of piezo-response force microscopy. A valence band offset of 0.82 eV and conduction band offset of 0.62 eV were obtained for BTO/GaN heterojunctions by x-ray photo-electron spectroscopy. This interfacial coupling phenomenon was analysed and its effect on the carrier conduction in the heterojunction was investigated by band alignment studies.

Item Type: Journal Article
Additional Information: copyright for this article belong to the IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Depositing User: Id for Latest eprints
Date Deposited: 07 Jul 2017 06:09
Last Modified: 07 Jul 2017 06:09
URI: http://eprints.iisc.ac.in/id/eprint/57310

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