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Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si: P and Ge: P delta-layers

Shamim, Saquib and Mahapatra, S and Scappucci, G and Klesse, W M and Simmons, M Y and Ghosh, Arindam (2017) Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si: P and Ge: P delta-layers. In: SCIENTIFIC REPORTS, 7 .

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Official URL: http://dx.doi.org/10.1038/srep46670

Abstract

We report quantum transport measurements on two dimensional (2D) Si: P and Ge: P delta-layers and compare the inelastic scattering rates relevant for weak localization (WL) and universal conductance fluctuations (UCF) for devices of various doping densities (0.3-2.5 x 10(18) m(-2)) at low temperatures (0.3-4.2 K). The phase breaking rate extracted experimentally from measurements of WL correction to conductivity and UCF agree well with each other within the entire temperature range. This establishes that WL and UCF, being the outcome of quantum interference phenomena, are governed by the same dephasing rate.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the NATURE PUBLISHING GROUP, MACMILLAN BUILDING, 4 CRINAN ST, LONDON N1 9XW, ENGLAND
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 03 Jun 2017 09:34
Last Modified: 03 Jun 2017 09:34
URI: http://eprints.iisc.ac.in/id/eprint/57088

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