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Emergence of a weak topological insulator from the BixSey family

Majhi, Kunjalata and Pal, Koushik and Lohani, Himanshu and Banerjee, Abhishek and Mishra, Pramita and Yadav, Anil K and Ganesan, R and Sekhar, B R and Waghmare, Umesh V and Kumar, P S Anil (2017) Emergence of a weak topological insulator from the BixSey family. In: APPLIED PHYSICS LETTERS, 110 (16).

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Official URL: http://dx.doi.org/10.1063/1.4981875

Abstract

We report the emergence of a weak topological insulator (WTI), BiSe, of the Bi-chalcogenide family with an indirect bandgap of 42 meV. Its structural unit consists of a bismuth bilayer (Bi-2), a known quantum spin hall insulator sandwiched between two units of Bi2Se3 which are three dimensional strong topological insulators. Our density functional theory calculations confirm the WTI phase and angle resolved photo-emission spectroscopy measurements carried out on cleaved single crystal flakes show Rashba states that closely agree with our theoretical predictions. Finally, we present a comparison between electronic and magneto-transport properties measured on single crystal flakes and thin films of BiSe. Published by AIP Publishing.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Division of Physical & Mathematical Sciences > Physics
Depositing User: review EPrints Reviewer
Date Deposited: 25 May 2017 10:04
Last Modified: 25 May 2017 10:04
URI: http://eprints.iisc.ac.in/id/eprint/57061

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