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Dependence of the 0.5 x (2e(2)/h) conductance plateau on the aspect ratio of InAs quantum point contacts with in-plane side gates

Das, PP and Jones, AM and Cahay, M and Kalita, S and Mal, SS and Sterin, NS and Yadunath, TR and Advaitha, M and Herbert, ST (2017) Dependence of the 0.5 x (2e(2)/h) conductance plateau on the aspect ratio of InAs quantum point contacts with in-plane side gates. In: JOURNAL OF APPLIED PHYSICS, 121 (8).

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Official URL: http://dx.doi.org/10.1063/1.4977110
Item Type: Journal Article
Additional Information: Copy right for this article belongs to the AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Depositing User: Id for Latest eprints
Date Deposited: 22 Apr 2017 04:53
Last Modified: 05 Mar 2019 06:38
URI: http://eprints.iisc.ac.in/id/eprint/56569

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