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Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing

Baby, Tessy Theres and Rommel, Manuel and von Seggern, Falk and Friederich, Pascal and Reitz, Christian and Dehm, Simone and Kuebel, Christian and Wenzel, Wolfgang and Hahn, Horst and Dasgupta, Subho (2017) Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing. In: ADVANCED MATERIALS, 29 (4).

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Official URL: http://dx.doi.org/10.1002/adma.201603858

Abstract

A printed vertical field-effecttran sistor is demonstrated, which decouples critical device dimensions from printing resolution. A printed mesoporous semiconductor layer, sandwiched between vertically stacked drive electrodes, provides <50 nm channel lengths. A polymer-electrolytebased gate insulator infiltrates the percolating pores of the mesoporous channel to accumulate charge carriers at every semiconductor domain, thereby, resulting in an unprecedented current density of MA cm(-2).

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the WILEY-V C H VERLAG GMBH, POSTFACH 101161, 69451 WEINHEIM, GERMANY
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Depositing User: Id for Latest eprints
Date Deposited: 09 Mar 2017 04:47
Last Modified: 09 Mar 2017 04:47
URI: http://eprints.iisc.ac.in/id/eprint/56328

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