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Enhanced spin accumulation in Fe3O4 based spin injection devices below the Verwey transition

Bhat, Shwetha G and Kumar, Anil P S (2016) Enhanced spin accumulation in Fe3O4 based spin injection devices below the Verwey transition. In: MATERIALS RESEARCH EXPRESS, 3 (12).

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Official URL: http://dx.doi.org/10.1088/2053-1591/3/12/125905

Abstract

Spin injection into GaAs and Si (both n and p-type) semiconductors using Fe3O4 is achieved with and without a tunnel barrier (MgO) via three-terminal electrical Hanle measurement. Interestingly, the magnitude of spin accumulation voltage (Delta V) in semiconductor is found to be associated with a drastic increment in Delta V in Fe3O4 based devices for temperature<120 K(T-V, the Verwey transition). Such an enhancement of Delta V is absent in the devices with Fe as spin source. Further, the overall device resistance has no drastic difference at T-V. This renders a direct proof that the observed Delta V is not influenced by the so-called metal-to-insulator transition of Fe3O4 at T-V. Observations from our elaborate investigations show that spin polarization of Fe3O4 has an explicit influence on the enhanced spin injection. It is argued that the theoretical prediction of half-metallicity of Fe3O4 above and below T-V has to be reinvestigated.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 10 Feb 2017 10:06
Last Modified: 10 Feb 2017 10:06
URI: http://eprints.iisc.ac.in/id/eprint/56220

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