ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Towards Barrier Free Contacts to n-type CNTFETs using Graphene Electrodes

Gangavarapu, Yasasvi PR and Lokesh, Punith Chikkahalli and Bhat, KN and Naik, AK (2016) Towards Barrier Free Contacts to n-type CNTFETs using Graphene Electrodes. In: 11th IEEE Nanotechnology Materials and Devices Conference (NMDC), OCT 09-12, 2016, Toulouse, FRANCE.

[img] PDF
IEEE_Nan_Mat_Dev_Con_2016.pdf - Published Version
Restricted to Registered users only

Download (278kB) | Request a copy
Official URL: http://dx.doi.org/10.1109/NMDC.2016.7777064

Abstract

This work illustrates the performance of n-type carbon nanotube field effect transistors (CNTFET) contacted with few layer graphene. The true barrier height at graphene-CNT junction is estimated using temperature dependent I-V measurements. Thermionic emission model for carrier transport in CNTs is used in the study. The calculated barrier height values for electron transport are extremely small and slightly negative signifying the Ohmic contact of graphene with the conduction band of CNTs.

Item Type: Conference Proceedings
Additional Information: Copy right for this article belongs to the IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Department/Centre: Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Depositing User: Id for Latest eprints
Date Deposited: 31 Jan 2017 05:32
Last Modified: 25 Feb 2019 11:19
URI: http://eprints.iisc.ac.in/id/eprint/56143

Actions (login required)

View Item View Item