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Accessing Rashba states in electrostatically gated topological insulator devices

Banerjee, Abhishek and Sundaresh, Ananthesh and Majhi, Kunjalata and Ganesan, R and Kumar, Anil P S (2016) Accessing Rashba states in electrostatically gated topological insulator devices. In: APPLIED PHYSICS LETTERS, 109 (23).

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Official URL: http://dx.doi.org/10.1063/1.4971834

Abstract

We study the low temperature electrical transport in gated BiSbTe1.25Se1.75/hexagonal-Boron Nitride van der Waals heterostructure devices. Our experiments indicate the presence of Rashba spin-split states confined to the sample surface. While such states have been observed previously in photo-emission spectroscopy and STM experiments, it has not been possible to unambiguously detect them by electrical means and their transport properties remain mostly unknown. We show that these states support high mobility conduction with Hall effect mobilities similar to 2000 to 3000 cm(2)/V-s that are paradoxically much larger than the mobilities of the topological surface states similar to 300 cm(2)/V-s at T = 2K. The spin-split nature of these states is confirmed by magneto-resistance measurements that reveal multi-channel weak anti-localization. Our work shows that Rashba spin split states can be electrically accessed in Topological insulators paving the way for future spintronic applications. Published by AIP Publishing.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 31 Jan 2017 05:28
Last Modified: 31 Jan 2017 05:28
URI: http://eprints.iisc.ac.in/id/eprint/56118

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