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SET and RESET states of As2Se3 doped GeTe4 bulk glasses probed by Raman spectroscopy

Pumlianmunga, Pumlianmunga and Ramesh, K (2016) SET and RESET states of As2Se3 doped GeTe4 bulk glasses probed by Raman spectroscopy. In: JOURNAL OF APPLIED PHYSICS, 120 (21).

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Official URL: http://dx.doi.org/10.1063/1.4971253

Abstract

Te based chalcogenide glasses are being explored for non-volatile memory applications. We report the electrical switching studies on bulk Ge(0.20)Te(0.8)0 glass alloyed with As0.40Se0.60 in different proportions. The addition of As0.40Se0.60 increases the electrical resistivity and the threshold voltage of (As0.4Se0.6)(x)(Ge0.2Te0.8)(1-x) glasses in the composition range 0 <= x <= 0.40. Glasses in the range 0 <= x <= 0.10 are found to exhibit memory switching, whereas glasses with x >= 0.15 exhibit threshold switching. The memory (SET) state can be brought back to RESET state by passing a current of 3-5 mA. Particularly, the glass with x = 0.10 is identified to be very stable, and it can be cycled between the SET and RESET state consistently with 3 mA current. The Raman spectra of SET and RESET states indicate that the SET sample has GeTe and Te crystalline units while the structure of RESET state is analogous to the as-quenched glass. Interestingly, the variation in the local structure is minimal for SET and RESET states for x = 0.10. And also the resistance of the SET state is relatively high. So they can be set to RESET state with less current and can be explored for low power phase change memory applications. Published by AIP Publishing.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 31 Jan 2017 05:28
Last Modified: 31 Jan 2017 05:28
URI: http://eprints.iisc.ac.in/id/eprint/56117

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