ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Nickel-Phosphide Contact for Effective Schottky Barrier Modulation in Black Phosphorus P-Channel Transistors

Ling, Zhi-Peng and Majumdar, Kausik and Sakar, Soumya and Mathew, Sinu and Zhu, Jun-Tao and Gopinadhan, K and Venkatesan, T and Ang, Kah-Wee (2016) Nickel-Phosphide Contact for Effective Schottky Barrier Modulation in Black Phosphorus P-Channel Transistors. In: International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), APR 25-27, 2016, Hsinchu, TAIWAN.

[img] PDF
Int_Sys_VLSI_Tec_Sys_App_2016.pdf - Published Version
Restricted to Registered users only

Download (2MB) | Request a copy
Official URL: http://dx.doi.org/10.1109/VLSI-TSA.2016.7480535

Abstract

We demonstrate a new contact technology for realizing a near band edge contact Schottky barrier height (FB) in black phosphorus (BP) p- channel transistors. This is achieved via the use of high work function nickel (Ni) and thermal anneal to produce a novel nickelphosphide (Ni2P) alloy which enables a record low hole FB of 12 meV. The formation of reactive Ni2P/ BP contact was found to further improve the transmission probability as compared to the Ni/ BP contact. Moreover, the penetration of Ni2P in the source and drain regions could additionally reduce the parasitic series resistance, leading to drive current improvement.

Item Type: Conference Proceedings
Additional Information: Copy right for this article belongs to the IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Depositing User: Id for Latest eprints
Date Deposited: 04 Jan 2017 04:56
Last Modified: 04 Jan 2017 04:56
URI: http://eprints.iisc.ac.in/id/eprint/55718

Actions (login required)

View Item View Item