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A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs

Joshi, Vipin and Soni, Ankit and Tiwari, Shree Prakash and Shrivastava, Mayank (2016) A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs. In: IEEE TRANSACTIONS ON NANOTECHNOLOGY, 15 (6). pp. 947-955.

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Official URL: http://dx.doi.org/10.1109/TNANO.2016.2615645

Abstract

This paper for the first time presents a comprehensive computational modeling approach for AlGaN/GaN high electron mobility transistors. Impact of the polarization charge at different material interfaces on the energy band profile as well as parasitic charge across the epitaxial stack is modeled and studied. Furthermore, impact of surface and bulk traps on two-dimensional electron gas, device characteristics, and gate leakage is accounted in this paper. For the first time, surface states modeled as donor type traps were correlated with gate leakage. Moreover, a new approach to accurately model the forward gate leakage in Schottky gate devices is proposed. Finally, impact of lattice and carrier heating is studied, while highlighting the relevance of carrier heating, lattice heating, and bulk traps over the device characteristics. In addition to this, modeling strategy for other critical aspects like parasitic charges, quantum effects, S/D Schottky contacts, and high field effects is presented.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Depositing User: Id for Latest eprints
Date Deposited: 30 Dec 2016 06:01
Last Modified: 30 Dec 2016 06:01
URI: http://eprints.iisc.ac.in/id/eprint/55607

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