Effect of plasma ion etching on Si nano wires towards superhydrophobicity

Madhavi, K and Suvarna, P and Ghosh, M and Shaik, H and Rao, Mohan G (2016) Effect of plasma ion etching on Si nano wires towards superhydrophobicity. In: International Conference on Recent Advances in Nano Science and Technology (RAINSAT), JUL 08-10, 2015, Sathyabama Univ, Int Res Ctr, Chennai, INDIA, pp. 1907-1913.

PDF Mat_Tod_Pro_3-6_1907_2016.pdf - Published Version Restricted to Registered users only Download (4MB) | Request a copy

Abstract

Superhydrophobic surfaces have attracted due to their potential applications such as self-cleaning surfaces etc. Many techniques have demonstrated in fabricating the artificial superhydrophobic surfaces such as CVD, Organic coatings etc. In this paper we present simple approach to fabricate non wettable superhydrobic surface on silicon Nanowires (Si NW) surface by H-2 ion etching technique through ECR device which is very efficient in producing the high ion density plasma at low pressure and at moderate energy. Large area high density (Si NW) were fabricated by two step Metal assisted chemical etching (MACE) of silicon using silver(Ag) as the catalyst along with pre immersion method. H-2 Plasma ion etching treatment was applied on the surface of the SiNW at the constant microwave power. The morphology of Si NWs is changed with the application of plasma which was revealed by Scanning electron microscopy. Water contact angles have been systematically measured for SiNWs& H-2 plasma treated SiNWs by increasing the etching time. It was observed that in H-2 ion plasma treated SiNWs, the water contact angle changed dramatically from 22.6 degrees to 146 degrees almost near to super hydrophobic nature. And these result suggest that the hydrogen plasma condition must be carefully regulated to achieve the superhydrophobic surface on silicon which is essential for many applications like Biosensors and Microfluidic surfaces. (C) 2015Elsevier Ltd. All rights reserved.

Item Type:	Conference Proceedings
Publication:	MATERIALS TODAY-PROCEEDINGS
Additional Information:	Copy right for this article belongs to the ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	03 Dec 2016 09:46
Last Modified:	03 Dec 2016 09:46
URI:	http://eprints.iisc.ac.in/id/eprint/55372

Actions (login required)

View Item