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Facile fabrication of electrolyte-gated single-crystalline cuprous oxide nanowire field-effect transistors

Stoesser, Anna and von Seggern, Falk and Purohit, Suneeti and Nasr, Babak and Kruk, Robert and Dehm, Simone and Wang, Di and Hahn, Horst and Dasgupta, Subho (2016) Facile fabrication of electrolyte-gated single-crystalline cuprous oxide nanowire field-effect transistors. In: NANOTECHNOLOGY, 27 (41).

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Official URL: http://dx.doi.org/10.1088/0957-4484/27/41/415205


Oxide semiconductors are considered to be one of the forefront candidates for the new generation, high-performance electronics. However, one of the major limitations for oxide electronics is the scarcity of an equally good hole-conducting semiconductor, which can provide identical performance for the p-type metal oxide semiconductor field-effect transistors as compared to their electron conducting counterparts. In this quest, here we present a bulk synthesis method for single crystalline cuprous oxide (Cu2O) nanowires, their chemical and morphological characterization and suitability as active channel material in electrolyte-gated, low-power, field-effect transistors (FETs) for portable and flexible logic circuits. The bulk synthesis method used in the present study includes two steps: namely hydrothermal synthesis of the nanowires and the removal of the surface organic contaminants. The surface treated nanowires are then dispersed on a receiver substrate where the passive electrodes are structured, followed by printing of a composite solid polymer electrolyte (CSPE), chosen as the gate insulator. The characteristic electrical properties of individual nanowire FETs are found to be quite interesting including accumulation-mode operation and field-effect mobility of 0.15 cm(2) V-1 s(-1).

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Depositing User: Id for Latest eprints
Date Deposited: 03 Dec 2016 05:04
Last Modified: 03 Dec 2016 05:04
URI: http://eprints.iisc.ac.in/id/eprint/55216

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