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Effect of Laser Irradiation on the Optical Properties of As40Se55Sb5 Thin Films

Naik, Ramakanta and Panda, Tribikram and Ganesan, R (2016) Effect of Laser Irradiation on the Optical Properties of As40Se55Sb5 Thin Films. In: National Seminar on Science and Technology for Human Development (STHD), DEC 05-06, 2014, Siksha O Anusandhan Univ, Inst Tech Educ & Res, Bhubaneswar, INDIA, pp. 294-300.

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Official URL: http://dx.doi.org/10.1166/asl.2016.6885

Abstract

The wide range of transmission and photo induced properties of chalcogenide materials make them useful and interesting in modern technology. The optical band gap, refractive index, extinction coefficient like parameters are important for preparation of the device for a particular wavelength. The 532 nm laser induced optical changes in thermally evaporated As40Se55Sb5 thin film is being reported in the present paper. The amorphous nature of the film is confirmed from the X-ray diffraction. The Swanepoel method was used to determine the thickness, refractive index and absorption coefficient by using the transmission spectra. The optical band gap was calculated from the absorption spectra by using Tauc relation. The optical band gap is reduced by 0.05 eV due to laser irradiation causing photo darkening process and the refractive index is increased due to increase in disorderness. The X-ray photoelectron spectra supports the optical changes that occurred in the films.

Item Type: Conference Proceedings
Additional Information: National Seminar on Science and Technology for Human Development (STHD), Siksha O Anusandhan Univ, Inst Tech Educ & Res, Bhubaneswar, INDIA, DEC 05-06, 2014
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 22 Oct 2016 06:57
Last Modified: 22 Oct 2016 06:57
URI: http://eprints.iisc.ac.in/id/eprint/54666

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