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Comparison of Breakdown Characteristics of DeNMOS Devices with Various Drain Structures

Tailor, Ketankumar H and Shrivastava, Mayank and Gossner, Harald and Baghini, Maryam Shojaei and Rao, Ramgopal V (2015) Comparison of Breakdown Characteristics of DeNMOS Devices with Various Drain Structures. In: IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), JUN 01-04, 2015, Singapore, INDIA, pp. 736-739.

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Official URL: http://dx.doi.org/10.1109/EDSSC.2015.7285222

Abstract

In this work, OFF-state breakdown characteristics of shallow trench isolation (STI)-type drain extended NMOS (DeNMOS) devices with different drain structures are studied and compared. The drain structures include deep-drain structure and structures with heavy doping on STI-sidewall regions. These devices show improved ON-state resistance without degrading breakdown voltage. Devices with higher doping underneath the drain diffusion region exhibit stronger bipolar triggering and higher snapback in their breakdown characteristics, thereby sustaining higher drain current levels before device failure. The devices with heavy doping only on the STI-sidewall show intermediate snapback characteristics between conventional and deep-drain devices in the breakdown region. Therefore, this work provides physical insights into the impact of different drain doping profiles on low-voltage I-V characteristics and high current drain breakdown characteristics of STI-DeMOS devices for different drain doping profiles.

Item Type: Conference Proceedings
Additional Information: Copy right for this article belongs to the IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Depositing User: Id for Latest eprints
Date Deposited: 22 Oct 2016 05:40
Last Modified: 22 Oct 2016 05:40
URI: http://eprints.iisc.ac.in/id/eprint/54625

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