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Zirconium doped TiO2 thin films: A promising dielectric layer

Kumar, Arvind and Mondal, Sandip and Rae, Koteswara KSR (2016) Zirconium doped TiO2 thin films: A promising dielectric layer. In: International Conference on Condensed Matter and Applied Physics (ICC), OCT 30-31, 2015, Bikaner, INDIA.

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Official URL: http://dx.doi.org/10.1063/1.4946633


In the present work, we have fabricated the zirconium doped TiO2 thin (ZTO) films from a facile spin - coating method. The addition of Zirconium in TiO2 offers conduction band offset to Si and consequently decreased the leakage current density by approximately two orders as compared to pure TiO2 thin (TO) films. The ZTO thin film shows a high dielectric constant 27 with a very low leakage current density similar to 10(-8) A/cm(2). The oxide capacitate, flat band voltage and change in flat band voltage are 172 pF, -1.19 V and 54 mV. The AFM analysis confirmed the compact and pore free flat surface. The RMS surface roughness is found to be 1.5 angstrom. The ellipsometry analysis also verified the fact with a high refractive index 2.21.

Item Type: Conference Proceedings
Additional Information: Copy right for this article belongs to the AMER INST PHYSICS, 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 30 Jun 2016 04:31
Last Modified: 30 Jun 2016 04:31
URI: http://eprints.iisc.ac.in/id/eprint/54111

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