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Making consistent contacts to graphene: effect of architecture and growth induced defects

Bharadwaj, Krishna B and Nath, Digbijoy and Pratap, Rudra and Raghavan, Srinivasan (2016) Making consistent contacts to graphene: effect of architecture and growth induced defects. In: NANOTECHNOLOGY, 27 (20).

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Official URL: http://dx.doi.org/10.1088/0957-4484/27/20/205705

Abstract

The effects of contact architecture, graphene defect density and metal-semiconductor work function difference on the resistivity of metal-graphene contacts have been investigated. An architecture with metal on the bottom of graphene is found to yield resistivities that are lower, by a factor of four, and most consistent as compared to metal on top of graphene. Growth defects in graphene film were found to further reduce resistivity by a factor of two. Using a combination of method and metal used, the contact resistivity of graphene has been decreased by a factor of 10 to 1200. +/-. 250 Omega mu m using palladium as the contact metal. While the improved consistency is due to the metal being able to contact uncontaminated graphene in the metal on the bottom architecture, lower contact resistivities observed on defective graphene with the same metal are attributed to the increased number of modes of quantum transport in the channel.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Keywords: contact resistivity; graphene; growth induced defects; contact architecture
Department/Centre: Division of Interdisciplinary Research > Centre for Nano Science and Engineering
Depositing User: Id for Latest eprints
Date Deposited: 12 May 2016 07:24
Last Modified: 12 May 2016 07:24
URI: http://eprints.iisc.ac.in/id/eprint/53802

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