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Design Optimization of Thin-Film Transistors Based on a Metal-Substrate-Semiconductor Architecture for High DC Voltage Sensing

Udatha, Sambashiva R and Ruhela, Abhinav and Saravanavel, Ganapathy and Yaswant, Vaddi and Singh, Jaspal and Sambandan, Sanjiv (2016) Design Optimization of Thin-Film Transistors Based on a Metal-Substrate-Semiconductor Architecture for High DC Voltage Sensing. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (4). pp. 1696-1703.

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Official URL: http://dx.doi.org/10.1109/TED.2016.2535317

Abstract

We discuss the potential application of high dc voltage sensing using thin-film transistors (TFTs) on flexible substrates. High voltage sensing has potential applications for power transmission instrumentation. For this, we consider a gate metal-substrate-semiconductor architecture for TFTs. In this architecture, the flexible substrate not only provides mechanical support but also plays the role of the gate dielectric of the TFT. Hence, the thickness of the substrate needs to be optimized for maximizing transconductance, minimizing mechanical stress, and minimizing gate leakage currents. We discuss this optimization, and develop n-type and p-type organic TFTs using polyvinyldene fluoride as the substrate-gate insulator. Circuits are also realized to achieve level shifting, amplification, and high drain voltage operation.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Keywords: Flexible electronics; high voltage; organic electronics; polyvinyldene fluoride (PVDF); thin-film transistor (TFT)
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Depositing User: Id for Latest eprints
Date Deposited: 28 Apr 2016 06:05
Last Modified: 28 Apr 2016 06:05
URI: http://eprints.iisc.ac.in/id/eprint/53714

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