Mondal, Sandip and Venkataraman, V (2016) All Inorganic Spin-Coated Nanoparticle-Based Capacitive Memory Devices. In: IEEE ELECTRON DEVICE LETTERS, 37 (4). pp. 396-399.
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We demonstrate all inorganic, robust, cost-effective, spin-coated, two-terminal capacitive memory metal-oxide nanoparticle-oxide-semiconductor devices with cadmium telluride nanoparticles sandwiched between aluminum oxide phosphate layers to form the dielectric memory stack. Using a novel high-speed circuit to decouple reading and writing, experimentally measured memory windows, programming voltages, retention times, and endurance are comparable with or better than the two-terminal memory devices realized using other fabrication techniques.
| Item Type: | Journal Article |
|---|---|
| Publication: | IEEE ELECTRON DEVICE LETTERS |
| Publisher: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| Additional Information: | Copy right for this article belongs to the IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA |
| Keywords: | Aluminum oxide phosphate (ALPO); cadmium telluride nanoparticle (CdTe-NP); floating gate memory; metal oxide nanoparticle oxide semiconductor devices (m-MONOS); high speed capacitance-voltage (HSCV) |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 28 Apr 2016 06:04 |
| Last Modified: | 28 Apr 2016 06:04 |
| URI: | http://eprints.iisc.ac.in/id/eprint/53711 |
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