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Solution processed Cu2SnS3 thin films for visible and infrared photodetector applications

Dias, Sandra and Krupanidhi, SB (2016) Solution processed Cu2SnS3 thin films for visible and infrared photodetector applications. In: AIP ADVANCES, 6 (2).

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Official URL: http://dx.doi.org/10.1063/1.4942775

Abstract

The Cu2SnS3 thin films were deposited using an economic, solution processible, spin coating technique. The films were found to possess a tetragonal crystal structure using X-ray diffraction. The film morphology and the particle size were determined using scanning electron microscopy. The various planes in the crystal were observed using transmission electron microscopy. The optimum band gap of 1.23 eV and a high absorption coefficient of 104 cm-1 corroborate its application as a photoactive material. The visible and infrared (IR) photo response was studied for various illumination intensities. The current increased by one order from a dark current of 0.31 mu A to a current of 1.78 mu A at 1.05 suns and 8.7 mu A under 477.7 mW/cm(2) IR illumination intensity, at 3 V applied bias. The responsivity, sensitivity, external quantum efficiency and specific detectivity were found to be 10.93 mA/W, 5.74, 2.47% and 3.47 x 10(10) Jones respectively at 1.05 suns and 16.32 mA/W, 27.16, 2.53% and 5.10 x 10(10) Jones respectively at 477.7 mW/cm(2) IR illumination. The transient photoresponse was measured both for visible and IR illuminations. (C) 2016 Author(s).

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Depositing User: Id for Latest eprints
Date Deposited: 06 Apr 2016 07:10
Last Modified: 06 Apr 2016 07:10
URI: http://eprints.iisc.ac.in/id/eprint/53629

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