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Stable p-type conductivity in B and N co-doped ZnO epitaxial thin film

Sahu, Rajib and Gholap, Hari Bhau and Mounika, Gandi and Dileep, Krishnan and Vishal, Badri and Ghara, Somnath and Datta, Ranjan (2016) Stable p-type conductivity in B and N co-doped ZnO epitaxial thin film. In: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253 (3). pp. 504-508.

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Official URL: http://dx.doi.org/10.1002/pssb.201552625


We report on the observation of stable p-type conductivity in B and N co-doped epitaxial ZnO thin films grown by pulsed laser deposition. Films grown at higher oxygen partial pressure (similar to 10(-1) Torr) shows p-type conductivity with a carrier concentration of similar to 3 x 10(16) cm(-3). This p-type conductivity is associated with the significant decrease in defect emission peaks due to the vacancy oxygen (V-O) and Schottky type-I native defects compared to films grown at low oxygen partial pressure (similar to 10(-5) Torr). The p-type conductivity is explained with the help of density functional theory (DFT) calculation considering off-stoichiometric BN1+x in the ZnO lattice. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the WILEY-V C H VERLAG GMBH, POSTFACH 101161, 69451 WEINHEIM, GERMANY
Keywords: ZnO; thins films; doping; p-type conductivity; density functional theory; pulsed laser deposition
Department/Centre: UG Programme
Depositing User: Id for Latest eprints
Date Deposited: 07 Apr 2016 07:17
Last Modified: 07 Apr 2016 07:17
URI: http://eprints.iisc.ac.in/id/eprint/53621

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