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Dielectric investigation of high-k yttrium copper titanate thin films

Monteduro, Anna Grazia and Ameer, Zoobia and Martino, Maurizio and Caricato, Anna Paola and Tasco, Vittorianna and Lekshmi, IC and Rinaldi, Ross and Hazarika, Abhijit and Choudhury, Debraj and Sarma, DD and Maruccio, Giuseppe (2016) Dielectric investigation of high-k yttrium copper titanate thin films. In: JOURNAL OF MATERIALS CHEMISTRY C, 4 (5). pp. 1080-1087.

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Official URL: http://dx.doi.org/10.1039/c5tc03189c


We report on the first dielectric investigation of high-k yttrium copper titanate thin films, which were demonstrated to be very promising for nanoelectronics applications. The dielectric constant of these films is found to vary from 100 down to 24 (at 100 kHz) as a function of deposition conditions, namely oxygen pressure and film thickness. The physical origin of such variation was investigated in the framework of universal dielectric response and Cole-Cole relations and by means of voltage dependence studies of the dielectric constant. Surface-related effects and charge hopping polarization processes, strictly dependent on the film microstructure, are suggested to be mainly responsible for the observed dielectric response. In particular, the bulky behaviour of thick films deposited at lower oxygen pressure evolves towards a more complex and electrically heterogeneous structure when either the thickness decreases down to 50 nm or the films are grown under high oxygen pressure.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the ROYAL SOC CHEMISTRY, THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Depositing User: Id for Latest eprints
Date Deposited: 02 Apr 2016 10:12
Last Modified: 02 Apr 2016 10:12
URI: http://eprints.iisc.ac.in/id/eprint/53505

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