The influence of microscopic parameters on the ionic conductivity of $SrBi_{2}(Nb_{1-x}V_{x})_{2}O_{9-\delta}(0 \leq x \leq 0.3)$ ceramics

Venkataraman, Harihara B and Varma, KBR (2005) The influence of microscopic parameters on the ionic conductivity of $SrBi_{2}(Nb_{1-x}V_{x})_{2}O_{9-\delta}(0 \leq x \leq 0.3)$ ceramics. In: Journal of Physics and Chemistry of Solids, 66 (10). pp. 1640-1646.

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Abstract

Layered $SrBi_{2}(Nb_{1-x}V_{x})_{2}O_{9-\delta}$(SBVN) ceramics with x lying in the range 0-0.3 (30 mol%) were fabricated by the conventional sintering technique. The microstructural studies confirmed the truncating effect of $V_{2}O_{5}$ on the abnormal platy growth of SBN grains. The electrical conductivity studies were centred in the 573-823 K as the Curie temperature ties in this range. The concentration of mobile charge carriers (n), the diffusion constant $(D_{O})$ and the mean free path (a) were calculated by using Rice and Roth formalism. The conductivity parameters such as ion-hopping rate $(\omega_{p})$ and the charge carrier concentration (K') term have been calculated using Almond and West formalism. The aforementioned microscopic parameters were found to be $V_{2}O_{5}$ content dependent on $SrBi_{2}(Nb_{1-x}V_{x})_{2}O_{9-\delta}$ ceramics.

Item Type:	Journal Article
Publication:	Journal of Physics and Chemistry of Solids
Publisher:	Elsevier Science Ltd
Additional Information:	Copyright for this article belongs to Elsevier.
Keywords:	A. Ceramics;C. X-ray diffraction; D. Microstructure; D. Diffusion; D. Electrical properties
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	13 Feb 2006
Last Modified:	19 Sep 2010 04:23
URI:	http://eprints.iisc.ac.in/id/eprint/5332

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