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High Temperature XRD of Cu2GeSe3

Premkumar, DS and Chetty, Raju and Malar, P and Mallik, Ramesh Chandra (2015) High Temperature XRD of Cu2GeSe3. In: 59th DAE Solid State Physics Symposium, DEC 16-20, 2014, VIT Univ, Vellore, INDIA.

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Official URL: http://dx.doi.org/10.1063/1.4918127

Abstract

The Cu2GeSe3 is prepared by solid state synthesis method. The high temperature XRD has been done at different temperature from 30 degrees C to 450 degrees C. The reitveld refinement confirms Cu2GeSe3 phase and orthorhombic crystal structure. The lattice constants are increasing with increase in the temperature and their rate of increase with respect to temperature are used for finding the thermal expansion coefficient. The calculation of the linear and volume coefficient of thermal expansion is done from 30 degrees C to 400 degrees C. Decrease in the values of linear expansion coefficients with temperature are observed along a and c axis. Since thermal expansion coefficient is the consequence of the distortion of atoms in the lattice; this can be further used to find the minimum lattice thermal conductivity at given temperature.

Item Type: Conference Proceedings
Additional Information: Copy right for this article belongs to the AMER INST PHYSICS, 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA
Keywords: High-temperature techniques and instrumentation; X-ray diffraction; Thermal expansion
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Depositing User: Id for Latest eprints
Date Deposited: 14 Jan 2016 04:30
Last Modified: 14 Jan 2016 04:30
URI: http://eprints.iisc.ac.in/id/eprint/53121

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